inchange semiconductor isc product specification isc silicon npn power transistor BD201/203 description collector-emitter breakdown voltage- : v (br)ceo = 45v(min)- BD201 60v(min)- bd203 complement to type bd202/204 applications designed for use in hi-fi equi pment delivering an output of 15 to 15 w into a 4 or 8 load. absolute maximum ratings(t a =25 ) symbol parameter value unit BD201 60 v cbo collector-base voltage bd203 60 v BD201 45 v ceo collector-emitter voltage bd203 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 8 a i cm collector current-peak t p 10ms 12 a i csm collector current-peak t p 2ms 25 a i b b base current 3 a p c collector power dissipation @ t c =25 60 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.08 /w r th j-a thermal resistance, junction to ambient 70 /w isc website www.iscsemi.cn www.datasheet.net/ datasheet pdf - http://www..co.kr/
inchange semiconductor isc product specification isc silicon npn power transistor BD201/203 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit BD201 45 v (br)ceo collector-emitter breakdown voltage bd203 i c = 0.2a ;i b = 0 b 60 v v (br)cbo collector-base breakdown voltage i c = 1ma ;i e = 0 60 v v (br)ebo emitter-base breakdown voltage i e = 1ma ;i c = 0 5 v v ce(sat)-1 collector-emitter saturation voltage i c = 3a; i b = 0.3a b 1.0 v v ce(sat)-2 collector-emitter saturation voltage i c = 6a; i b = 0.6a b 1.5 v v be(sat) base-emitter saturation voltage i c = 6a; i b = 0.6a b 2.0 v v be( on ) base-emitter on voltage i c = 3a ; v ce = 2v 1.5 v i ceo collector cutoff current v ce = 30v; i b = 0 b 0.2 ma i cbo collector cutoff current v cb = 40v;i e = 0; t j = 150 1.0 ma i ebo emitter cutoff current v eb = 5v; i c =0 0.5 ma BD201 i c = 3a ; v ce = 2v h fe dc current gain bd203 i c = 2a ; v ce = 2v 30 f t current-gain?bandwidth product i c = 0.3a ; v ce = 3v, f test = 1.0mhz 7.0 mhz switching times t on turn-on time 1 s t off turn-off time i c = 2a; i b1 = -i b2 = 0.2a 4 s isc website www.iscsemi.cn 2 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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